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Wittwer, Valentin
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Wittwer, Valentin
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valentin.wittwer@unine.ch
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Voici les ƩlƩments 1 - 10 sur 25
- PublicationAccĆØs libreAbsolute frequency referencing in the long wave infrared using a quantum cascade laser frequency comb(2022-4-4)
; ; ; ; Optical frequency combs (OFCs) based on quantum cascade lasers (QCLs) have transformed mid-infrared spectroscopy. However, QCL-OFCs have not yet been exploited to provide a broadband absolute frequency reference. We demonstrate this possibility by performing comb-calibrated spectroscopy at 7.7 Āµm (1305 cmā1) using a QCL-OFC referenced to a molecular transition. We obtain 1.5Ā·10ā10 relative frequency stability (100-s integration time) and 3Ā·10ā9 relative frequency accuracy, comparable with state-of-the-art solutions relying on nonlinear frequency conversion. We show that QCL-OFCs can be locked with sub-Hz-level stability to a reference for hours, thus promising their use as metrological tools for the mid-infrared. - PublicationAccĆØs libreCoherently-averaged dual comb spectrometer at 7.7ā Āµm with master and follower quantum cascade lasers(2021-6)
; ; ; ; ; ; - PublicationAccĆØs libreCarrier envelope offset frequency detection and stabilization of a diode-pumped mode-locked Ti:sapphire laser
; ; ; We demonstrate the first diode-pumped Ti:sapphire laser frequency comb. It is pumped by two green laser diodes with a total pump power of 3 W. The Ti:sapphire laser generates 250 mW of average output power in 61-fs pulses at a repetition rate of 216 MHz. We generated an octave-spanning supercontinuum spectrum in a photonic-crystal fiber and detected the carrier envelope offset (CEO) frequency in a standard Ę-to-2Ę interferometer setup. We stabilized the CEO-frequency through direct current modulation of one of the green pump diodes with a feedback bandwidth of 55 kHz limited by the pump diode driver used in this experiment. We achieved a reduction of the CEO phase noise power spectral density by 140 dB at 1 Hz offset frequency. An advantage of diode pumping is the ability for high-bandwidth modulation of the pump power via direct current modulation. After this experiment, we studied the modulation capabilities and noise properties of green pump laser diodes with improved driver electronics. The current-to-output-power modulation transfer function shows a bandwidth larger than 1 MHz, which should be sufficient to fully exploit the modulation bandwidth of the Ti:sapphire gain for CEO stabilization in future experiments. - PublicationAccĆØs libreExperimentally verified pulse formation model for high-power femtosecond VECSELs
; ; ; Keller, UrsulaOptically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs), passively modelocked with a semiconductor saturable absorber mirror (SESAM), have generated the highest average output power from any sub-picosecond semiconductor laser. Many applications, including frequency comb synthesis and coherent supercontinuum generation, require pulses in the sub-300-fs regime. A quantitative understanding of the pulse formation mechanism is required in order to reach this regime while maintaining stable, high-average-power performance. We present a numerical model with which we have obtained excellent quantitative agreement with two recent experiments in the femtosecond regime, and we have been able to correctly predict both the observed pulse duration and the output power for the first time. Our numerical model not only confirms the soliton-like pulse formation in the femtosecond regime, but also allows us to develop several clear guidelines to scale the performance toward shorter pulses and higher average output power. In particular, we show that a key VECSEL design parameter is a high gain saturation fluence. By optimizing this parameter, 200-fs pulses with an average output power of more than 1 W should be possible. - PublicationAccĆØs libreHigh-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation
; ; ; Keller, UrsulaPresented is an optically pumped modelocked integrated externalcavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber. - PublicationAccĆØs libreVECSEL gain characterization
; ; ; Keller, UrsulaWe present the first full gain characterization of two vertical external cavity surface emitting laser (VECSEL) gain chips with similar designs operating in the 960-nm wavelength regime. We optically pump the structures with continuous-wave (cw) 808-nm radiation and measure the nonlinear reflectivity for 130-fs and 1.4-ps probe pulses as function of probe pulse fluence, pump power, and heat sink temperature. With this technique we are able to measure the saturation behavior for VECSEL gain chips for the first time. The characterization with 1.4-ps pulses resulted in saturation fluences of 40-80 ĀµJ/cm2, while probing with 130-fs pulses yields reduced saturation fluences of 30-50 ĀµJ/cm2 for both structures. For both pulse durations this is lower than previously assumed. A small-signal gain of up to 5% is obtained with this technique. Furthermore, in a second measurement setup, we characterize the spectral dependence of the gain using a tunable cw probe beam. We measure a gain bandwidth of over 26 nm for both structures, full width at half maximum. - PublicationAccĆØs libreGain characterization and passive modelocking of electrically pumped VECSELs
; ; Keller, UrsulaLinear and nonlinear gain characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) is presented with spectrally resolved measurements of the gain and with gain saturation measurements of two EP-VECSEL samples with different field enhancement in the quantum-well gain layers. The spectral bandwidth, small-signal gain and saturation fluence of the devices are compared. Using the sample with the larger bandwidth, we have demonstrated the shortest pulses generated from a passively modelocked EP-VECSEL to date. With a low-saturation-fluence SESAM for passive modelocking we have achieved 9.5-ps pulses with 7.6 mW average output power at a repetition rate of 1.4 GHz. With a higher output coupler transmission the pulse duration was increased to 31 ps with an average output power of 13.6 mW. The pulses were chirped mainly due to the group delay dispersion (GDD) introduced by the intermediate DBR, which compensates the optical loss in the structure. - PublicationAccĆØs libreLow repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach
; ; ; Keller, UrsulaUltrafast VECSELs are compact pulsed laser sources with more flexibility in the emission wavelength compared to diode-pumped solid-state lasers. Typically, the reduction of the pulse repetition rate is a straightforward method to increase both pulse energy and peak power. However, the relatively short carrier lifetime of semiconductor gain materials of a few nanoseconds sets a lower limit to the repetition rate of passively modelocked VECSELs. This fast gain recovery combined with low pulse repetition rates leads to the buildup of multiple pulses in the cavity. Therefore, we applied an active multipass approach with which demonstrate fundamental modelocking at a repetition rate of 253 MHz with 400 mW average output power in 11.3 ps pulses. - PublicationAccĆØs libreCarrier-Envelope Offset Frequency Stabilization of a Thin-Disk Laser Oscillator via Depletion Modulation
; ; ; ; Morgner, UweWe present a novel concept for the stabilization of the carrier-envelope offset (CEO) frequency of femtosecond pulse trains from thin-disk laser oscillators by exploiting gain depletion modulation in the active gain region. We shine a small fraction of the laser output power back onto the thin disk allowing the population inversion in the gain medium to be controlled. We employ this technique in our home-built Kerr-lens mode-locked Yb:YAG thin-disk laser and benchmark the performance against the proven technique of pump current modulation for CEO stabilization, showing that the two techniques have equivalent performance. The new method which only requires an additional AOM demonstrates a scalable and cost-effective method for CEO stabilization of high-power laser oscillators. - PublicationAccĆØs libreSub-100-fs Kerr lens mode-locked Yb:Lu2O3 thin-disk laser oscillator operating at 21 W average power
; ; ; ; ; We investigate power-scaling of a Kerr lens mode-locked (KLM) Yb:Lu2O3 thin-disk laser (TDL) oscillator operating in the sub-100-fs pulse duration regime. Employing a scheme with higher round-trip gain by increasing the number of passes through the thin-disk gain element, we increase the average power by a factor of two and the optical-to-optical efficiency by a factor of almost three compared to our previous sub-100-fs mode-locking results. The oscillator generates pulses with a duration of 95 fs at 21.1 W average power and 47.9 MHz repetition rate. We discuss the cavity design for continuous-wave and mode-locked operation and the estimation of the focal length of the Kerr lens. Unlike to usual KLM TDL oscillators, an operation at the edge of the stability zone in continuous-wave operation is not required. This work shows that KLM TDL oscillators based on the gain material Yb:Lu2O3 are an excellent choice for power-scaling of laser oscillators in the sub-100-fs regime, and we expect that such lasers will soon operate at power levels in excess of hundred watts.