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  4. High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation
 
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High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation

Auteur(s)
Wittwer, Valentin 
Institut de physique 
Mangold, Mario
Hoffmann, Martin 
Institut de physique 
Sieber, Oliver D
Golling, Matthias
Südmeyer, Thomas 
Institut de physique 
Keller, Ursula
In
Electronic Letters, IET, 2012/48/18/1144-1145
Résumé
Presented is an optically pumped modelocked integrated externalcavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber.
Identifiants
https://libra.unine.ch/handle/123456789/8288
_
10.1049/el.2012.2405
Type de publication
journal article
Dossier(s) à télécharger
 main article: Wittwer_V.J.-High-power_integrated-20140818.pdf (722.67 KB)
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