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Boron <i>K</i>-shell spectroscopy of boron-doped silicon
Auteur(s)
Esposto, F. J.
Aebi, Philipp
Tyliszczak, T.
Hitchcock, A. P.
Kasrai, M.
Bozek, J. D.
Jackman, T. E.
Rolfe, S. R.
Date de parution
1991
In
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (JVST-A), American Vacuum Society (AVS), 1991/9/3/1663-1669
Résumé
The B <i>K</i>-edge spectra of various model compounds (BF<sub>3</sub>, KBF<sub>4</sub>, B<sub>2</sub>O<sub>3</sub>, B(OH)<sub>3</sub>, orthocarborane (B<sub>10</sub>H<sub>10</sub>C<sub>2</sub>H<sub>2</sub>) and elemental boron) were investigated to characterize the sensitivity of B <i>K</i>-edge spectra to local chemical environment. Electron yield detection of synchrotron photoabsorption at the boron <i>K</i>-edge was used to study the B sites in Si(B) epilayers grown by molecular beam epitaxy and <i>in situ</i> B doped from evaporated B<sub>2</sub>O<sub>3</sub>. Although there were interesting spectral variations with composition and annealing, comparison between the x-ray electron yield results and those from secondary ion mass spectroscopy and electrochemical capacitance voltage measurements indicate that the yield spectra are strongly influenced by surface segregation.
Identifiants
Type de publication
journal article
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