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  4. Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering
 
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Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering

Auteur(s)
Hofstetter, Daniel 
Institut de physique 
Zappe, H. P.
Epler, J. E.
Riel, P.
Date de parution
1995
In
Applied Physics Letters, American Institute of Physics (AIP), 1995/67//1978-1980
Résumé
Wavelength-shifted GaAs/AlGaAs Fabry–Pérot ridge waveguide lasers were fabricated by vacancy-enhanced quantum well disordering using dielectric cap annealing. 500 <i>µ</i>m long and 4 <i>µ</i>m wide Fabry–Pérot lasers with emission wavelengths selectively shifted by 20 nm were integrated with unshifted lasers on the same chip, characterized and further compared with lasers fabricated from as-grown material. These investigations showed that the absorption edge of a single-quantum well double heterostructure can be selectively blueshifted after epitaxial growth without compromising diode laser performance.
Identifiants
https://libra.unine.ch/handle/123456789/16768
_
10.1063/1.114759
Type de publication
journal article
Dossier(s) à télécharger
 main article: Hofstetter_D._-_Multiple_wavelength_Fabry-P_rot_20080507.pdf (244.93 KB)
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