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Lattice-Matched GaN–InAlN Waveguides at λ = 1.55 <i>μ</i>m Grown by Metal–Organic Vapor Phase Epitaxy
Auteur(s)
Lupu, A.
Julien, François H.
Golka, Sebastian
Pozzovivo, G.
Strasser, Gottfried
Baumann, Esther
Giorgetta, Fabrizio R.
Nicolay, S.
Mosca, M.
Feltin, E.
Carlin, J.-F.
Grandjean, N.
Date de parution
2008
In
Photonics Technology Letters (IEEE), Institute of Electrical and Electronics Engineers (IEEE), 2008/20/2/102-104
Résumé
We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-<i>μ</i>m-wide WGs the propagation losses in the 1.5- to 1.58-<i>μ</i>m spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.
Identifiants
Type de publication
journal article
