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  4. Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells: temperature-induced morphological changes
 
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Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells: temperature-induced morphological changes

Auteur(s)
Faÿ Sylvie
Kroll, U.
Bucher, C.
Vallat-Sauvain, Evelyne
Shah, Arvind
Date de parution
2005
In
Solar Energy Materials and Solar Cells, Elsevier, 2005/86/3/385-397
Mots-clés
  • Tco
  • Lp-cvd
  • zinc oxide
  • growth
  • thin-film solar cells
  • Tco

  • Lp-cvd

  • zinc oxide

  • growth

  • thin-film solar cells...

Résumé
Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thin-film silicon solar cells. This paper presents a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below the pressures usually applied for the deposition of this kind of material. A temperature series has been deposited, showing a morphological transition around 150 °C. ZnO samples deposited with temperatures just higher than this transition are constituted of large grains highly oriented along a single crystallographic orientation. These “monocrystals” lead to low resistivity values, showing a clear correlation between the size of the surface grains and the electrical performance of corresponding films. Additionally, these large grains also yield ZnO layers with high transparency and high light-scattering power, specially suitable for solar cell technology based on thin-film silicon.
Identifiants
https://libra.unine.ch/handle/123456789/16260
_
10.1016/j.solmat.2004.08.002
Type de publication
journal article
Dossier(s) à télécharger
 main article: Fa_S._-_Low_pressure_chemical_vapour_deposition_of_ZnO_20080815.pdf (661.75 KB)
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