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Correlation between transport properties of a-Si:H layers and cell performances incorporating these layers
Auteur(s)
Wyrsch, Nicolas
Beck, N.
Hof, Ch.
Goerlitzer, M.
Shah, Arvind
Date de parution
1996
In
Journal of Non-Crystalline Solids, Elsevier, 1996/198-200//238-241
Résumé
Using the new ‘quality parameter’, μ<sup>0</sup>τ<sup>0</sup>, the authors were able to show, for the first time, a clear correlation between transport properties of a series of a-Si:H films (grown at various deposition temperatures) and the efficiency of p-i-n cells incorporating the same material as i-layer. In this paper, additional experimental data are presented sustaining, on one hand, the validity of the proposed ‘quality parameter’, μ<sup>o</sup>τ<sup>o</sup>, and on the other hand, the existence of a correlation between cell performances and transport properties. Furthermore, limitations of this correlation, due to technological problems (e.g., chemical contamination by Na, O,…) involved in the practical fabrication of a-Si:H solar cells are also illustrated and discussed.
Identifiants
Type de publication
journal article
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