Options
Intrinsic microcrystalline silicon (μc-Si:H)-a promising newthin film solar cell material
Auteur(s)
Meier, Johannes
Dubail, S.
Flückiger, R.
Fischer, Diego
Keppner, Herbert
Shah, Arvind
Date Issued
1994
Journal
Conference Record of the Twenty Fourth IEEE Photovoltaic Specialists Conference (1994 IEEE First World Conference on Photovoltaic Energy Conversion), Institute of Electrical and Electronics Engineers (IEEE), 1994/1//409-412
Abstract
“Compensated” microcrystalline silicon is obtained by adding 8-20 ppm diborane in the plasma gas phase. p-i-n cells with such i-layers have increased infrared sensitivity when compared to a-Si:H p-i-n cells. The preparation of the world's first “mixed stacked” a-Si:H/μc-Si:H tandem cell with an initial efficiency of 9.1% is reported. The μc-Si:H cells showed no degradation of the cell performance under intense light-soaking. Typical properties of the μc-Si:H cell indicate that the electronic transport is dominated by the crystalline phase of the material.
Publication type
journal article
