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a-Si:H films deposited at high rates in a 'VHF' silane plasma: potential for low-cost solar cells
Auteur(s)
Shah, Arvind
Sauvain, E.
Wyrsch, Nicolas
Curtins, H.
Leutz, B.
Shen, D. S.
Chu, V.
Wagner, S.
Schade, H.
Chao, H. W. A.
Date de parution
1988
In
Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), 1988/1//282-287
Résumé
The very-high-frequency glow discharge (VHF-GD) is a high-rate deposition method for amorphous silicon based on the use of plasma excitation frequencies in the range 30-150 MHz. Thereby the high-energy tail of the electron energy density function is enhanced, increasing the deposition rate R, without a corresponding increase in electric field and ion bombardment. Here, an extensive set of optoelectronic properties (σ<sub>dark</sub>, E<sub>a</sub>, σ<sub>ph</sub>, CPM, PDS, TOF, SSPG, steady-state Hecht plot) is presented for samples prepared by VHF-GD for the above frequency range and R≈12-15 AA/s. Emphasized are hole transport properties. With values of (μ<sup>D</sup>τ<sup>t</sup>)<sub>h</sub> by TOF (time of flight) around 3*10<sup>-10</sup> but up to ≈5*10<sup>-9</sup> cm<sup>2</sup>V<sup>-1</sup>, VHF-GD is judged to be adequate for solar-cell applications.
Identifiants
Type de publication
journal article
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