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  4. Nondestructive Room-Temperature Adsorption of 2,4,6-tri(2t-thienyl)-1,3,5-triazine on a Si-B Interface: High-Resolution STM Imaging and Molecular Modeling

Nondestructive Room-Temperature Adsorption of 2,4,6-tri(2<sup><i>t</i></sup>-thienyl)-1,3,5-triazine on a Si-B Interface: High-Resolution STM Imaging and Molecular Modeling

Author(s)
Makoudi, Y.
Palmino, F.
Duverger, E.
Arab, M.
Chérioux, Frédéric
Ramseyer, C.
Therrien, Bruno  
Institut de chimie  
Tschan, Mathieu J.-L.
Süss-Fink, Georg  
Institut de chimie  
Date issued
2008
In
Physical Review Letters, American Physical Society (APS), 2008/100/076405/1-4
Abstract
Organic nanostructures on semiconductors are currently investigated but the surfaces are known to interact strongly with molecules. To reduce the molecule-surface interaction, we used the Si(111)-B √3 × √3R30°. Deposition of isolated 2,4,6-tri(2<sup><i>t</i></sup>-thienyl)-1,3,5-triazine, was achieved at room temperature without modification of their π skeleton. This fascinating arrangement, observed by STM, has been validated by full density functional theory computations onto the entire system. The theoretical results give a clear explanation for the specific adsorption sites of molecules on the substrate.
Publication type
journal article
Identifiers
https://libra.unine.ch/handle/20.500.14713/58119
DOI
10.1103/PhysRevLett.100.076405
-
https://libra.unine.ch/handle/123456789/15675
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