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  4. MBE growth of AlN/GaN-based photovoltaic intersubband photodetectors
 
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MBE growth of AlN/GaN-based photovoltaic intersubband photodetectors

Auteur(s)
Monroy, Eva
Guillot, Fabien
Baumann, Esther
Giorgetta, Fabrizio R.
Hofstetter, Daniel 
Institut de physique 
Date de parution
2008
In
Physica status solidi (a), Wiley, 2008/205/5/1060-1063
Résumé
We report on the molecular-beam epitaxial growth, fabrication and characterization of AlN/GaN photovoltaic quantum well infrared photodetectors operating at 1.55 µm. Devices display a spectrally-narrow photovoltaic response to p-polarized light in the near infrared at room temperature. We have analysed the effect of the growth temperature, quantum well thickness, and number of periods in the active region, concluding that responsivity is enhanced by growing at relatively low temperature and by increasing the number of quantum wells.
Identifiants
https://libra.unine.ch/handle/123456789/12199
_
10.1002/pssa.200778598
Type de publication
journal article
Dossier(s) à télécharger
 main article: Monroy_E._-_MBE_growth_of_AIN_GaN-based_phovoltaic_20101213.pdf (529.4 KB)
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