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Structural investigations of epitaxial InN by x-ray photoelectron diffraction and x-ray diffraction
Auteur(s)
Despont, Laurent
Garnier, Michael Bernard Gunnar
Baumann, Esther
Giorgetta, Fabrizio R.
Aebi, Philipp
Kirste, Lutz
Lu, Hai
Schaff, William J.
Date Issued
2007
Journal
Applied Physics Letters, American Institute of Physics (AIP), 2007/90/191912/1-3
Abstract
The authors investigated a 1 <i>µ</i>m thick molecular beam epitaxy–grown InN film by means of full hemispherical x-ray photoelectron diffraction and high resolution x-ray diffraction. While x-ray diffraction reveals that this nominally hexagonal InN layer contains roughly 1% of cubic phase InN, a comparison between measured and simulated x-ray photoelectron diffraction data allowed them to directly determine the polarity of the crystal. Furthermore, the data indicate that the InN surface consists of a mosaic of domains oriented at an azimuth of 180° to each other, where the azimuth corresponds to the rotation angle around the [0001] axis.
Publication type
journal article
