Logo du site
  • English
  • Français
  • Se connecter
Logo du site
  • English
  • Français
  • Se connecter
  1. Accueil
  2. Université de Neuchâtel
  3. Publications
  4. Low pressure chemical vapor deposited Zinc Oxide for thin film silicon solar cells: optical and electrical properties
 
  • Details
Options
Vignette d'image

Low pressure chemical vapor deposited Zinc Oxide for thin film silicon solar cells: optical and electrical properties

Auteur(s)
Steinhauser, Jérôme
Editeur(s)
Ballif, Christophe
Date de parution
2008
Mots-clés
  • Zinc oxide
  • low pressure chemical vapor deposition
  • transparent conductive oxide
  • thin film silicon solar cells.
  • Zinc oxide

  • low pressure chemical...

  • transparent conductiv...

  • thin film silicon sol...

Résumé
Transparent conductive oxides (TCO), such as LPCVD ZnO:B (low pressure chemical vapor deposited zinc oxide doped with boron), play a major role as contacts in thin film silicon photovoltaic solar cells. This document study the "LPCVD ZnO:B layers, from the deposition process to the final application" and focus especially on their electrical and optical properties. This work intended on understanding the physics of the LPCVD ZnO:B film properties in order to efficiently optimize its characteristics to obtain TCO films well suited for thin film solar cell applications. In particular, theoretical models that describe the optical and electrical properties of LPCVD ZnO:B films are determined and verified experimentally.
Notes
Thèse de doctorat : Université de Neuchâtel, 2008 ; Th. 2099
Identifiants
https://libra.unine.ch/handle/123456789/15057
_
10.35662/unine-thesis-2099
Type de publication
doctoral thesis
Dossier(s) à télécharger
 main article: Th_SteinhauserJU.pdf (3.93 MB)
google-scholar
Présentation du portailGuide d'utilisationStratégie Open AccessDirective Open Access La recherche à l'UniNE Open Access ORCIDNouveautés

Service information scientifique & bibliothèques
Rue Emile-Argand 11
2000 Neuchâtel
contact.libra@unine.ch

Propulsé par DSpace, DSpace-CRIS & 4Science | v2022.02.00