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  4. Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment
 
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Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment

Auteur(s)
Brochard, Pierre 
Institut de physique 
Wittwer, Valentin Johannes
Bilicki, Slawomir
Resan, Bojan
Weingarten, Kurt John
Schilt, Stephane 
Institut de physique 
Südmeyer, Thomas 
Institut de physique 
In
IEEE Photonics Journal, IEEE, 2018/10/1/# 3200110
Mots-clés
  • Laser stability
  • mode-locked lasers
  • phase noise
  • Laser stability

  • mode-locked lasers

  • phase noise

Résumé
We present a detailed frequency noise characterization of an ultrafast diode-pumped solid-state laser operating at 25-GHz repetition rate. The laser is based on the gain material Er:Yb:glass and operates at a wavelength of 1.55 μm. Using a beating measure-ment with an ultralow-noise continuous-wave laser in combination with a dedicated electrical scheme, we measured the frequency noise properties of an optical mode of the 25-GHz laser, of its repetition rate and indirectly of its carrier-envelope offset (CEO) signal without detecting the CEO frequency by the standard approach of nonlinear interferometry. We ob-served a strong anticorrelation between the frequency noise of the indirect CEO signal and of the repetition rate in our laser, leading to optical modes with a linewidth below 300 kHz in the free-running laser (at 100-ms integration time), much narrower than the individual contributions of the carrier envelope offset and repetition rate. We explain this behavior by the presence of a fixed point located close to the optical carrier in the laser spectrum for the dominant noise source.
Identifiants
https://libra.unine.ch/handle/123456789/3965
_
10.1109/JPHOT.2017.2784857
Type de publication
journal article
Dossier(s) à télécharger
 main article: Brochard_P.-Frequency_Noise_Characterization-2018012.pdf (2.73 MB)
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