Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering
Date de parution
Applied Physics Letters, American Institute of Physics (AIP), 1995/67//1978-1980
Wavelength-shifted GaAs/AlGaAs Fabry–Pérot ridge waveguide lasers were fabricated by vacancy-enhanced quantum well disordering using dielectric cap annealing. 500 <i>µ</i>m long and 4 <i>µ</i>m wide Fabry–Pérot lasers with emission wavelengths selectively shifted by 20 nm were integrated with unshifted lasers on the same chip, characterized and further compared with lasers fabricated from as-grown material. These investigations showed that the absorption edge of a single-quantum well double heterostructure can be selectively blueshifted after epitaxial growth without compromising diode laser performance.
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