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First investigation of the noise and modulation properties of the carrier-envelope offset in a modelocked semiconductor laser
Auteur(s)
Editeur(s)
Schilt, Stéphane
Wittwer, Valentin J
Waldburger, Dominik
Link, Sandro M
Alfieri, Cesare G. E
Golling, Matthias
Morel, Jacques
Keller, Ursula
Südmeyer, Thomas. Laboratoire Temps-Fréquence, Université de Neuchâtel, Switzerland
In
Optics Letters, Optical Society of America, 2016/41/14/3165-3168
Résumé
We present the first characterization of the noise properties and modulation response of the carrier-envelope offset (CEO) frequency in a semiconductor modelocked laser. The CEO beat of an optically-pumped vertical external-cavity surface-emitting laser (VECSEL) at 1030 nm was characterized without standard <i>ƒ</i>-to-2<f>ƒ</i> interferometry. Instead, we used an appropriate combination of signals obtained from the modelocked oscillator and an auxiliary continuous-wave laser to extract information about the CEO signal. The estimated linewidth of the free-running CEO beat is approximately 1.5 MHz at 1-s observation time, and the feedback bandwidth to enable a tight CEO phase lock to be achieved in a future stabilization loop is in the order of 300 kHz. We also characterized the amplitude and phase of the pump current to CEO-frequency transfer function, which showed a 3-dB bandwidth of ∼300 <b>kHz</b> for the CEO frequency modulation. This fulfills the estimated required bandwidth and indicates that the first self-referenced phase-stabilization of a modelocked semiconductor laser should be feasible in the near future.
Autre version
http://dx.doi.org/10.1364/OL.41.003165
Type de publication
Resource Types::text::journal::journal article
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