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Südmeyer, Thomas
Nom
Südmeyer, Thomas
Affiliation principale
Fonction
Directeur
Email
thomas.sudmeyer@unine.ch
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Résultat de la recherche
Voici les éléments 1 - 10 sur 13
- PublicationMétadonnées seulementExperimentally verified pulse formation model for high-power femtosecond VECSELs(2013)
; ; ; Keller, Ursula - PublicationMétadonnées seulementHigh-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation(2012)
; ; ; Keller, Ursula - PublicationMétadonnées seulementSESAMs for high-power oscillators: design guidelines and damage thresholds(2012)
; ; Keller, Ursula - PublicationMétadonnées seulementVECSEL gain characterization(2012)
; ; ; Keller, Ursula - PublicationMétadonnées seulementGain characterization and passive modelocking of electrically pumped VECSELs(2012)
; ; Keller, Ursula - PublicationMétadonnées seulementLow repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach(2012)
; ; - PublicationMétadonnées seulementFemtosecond VECSEL with tunable multi-gigahertz repetition rate(2011)
; ; ; Keller, Ursula - PublicationAccès libreExperimentally verified pulse formation model for high-power femtosecond VECSELs
; ; ; Keller, UrsulaOptically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs), passively modelocked with a semiconductor saturable absorber mirror (SESAM), have generated the highest average output power from any sub-picosecond semiconductor laser. Many applications, including frequency comb synthesis and coherent supercontinuum generation, require pulses in the sub-300-fs regime. A quantitative understanding of the pulse formation mechanism is required in order to reach this regime while maintaining stable, high-average-power performance. We present a numerical model with which we have obtained excellent quantitative agreement with two recent experiments in the femtosecond regime, and we have been able to correctly predict both the observed pulse duration and the output power for the first time. Our numerical model not only confirms the soliton-like pulse formation in the femtosecond regime, but also allows us to develop several clear guidelines to scale the performance toward shorter pulses and higher average output power. In particular, we show that a key VECSEL design parameter is a high gain saturation fluence. By optimizing this parameter, 200-fs pulses with an average output power of more than 1 W should be possible. - PublicationAccès libre1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
; - PublicationAccès libreHigh-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation
; ; ; Keller, UrsulaPresented is an optically pumped modelocked integrated externalcavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber.