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  4. 1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
 
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1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

Auteur(s)
Zhang, J. Y
Oehler, A. E. H
Resan, B
Kurmulis, S
Zhou, K. J
Wang, Q
Mangold, Mario
Südmeyer, Thomas 
Institut de physique 
Keller, Ursula
Weingarten, K. J
Hogg, R. A
In
Scientific Reports, Nature Publishing Group, 2012/2//# 477
Mots-clés
  • Materials for optics
  • Nonlinear optics
  • Ultrafast photonics
  • Nanophotonics and plasmonics
  • Materials for optics

  • Nonlinear optics

  • Ultrafast photonics

  • Nanophotonics and pla...

Résumé
High pulse repetition rate (≥10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ∼2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.
Identifiants
https://libra.unine.ch/handle/123456789/8290
_
10.1038/srep00477
Type de publication
journal article
Dossier(s) à télécharger
 main article: Zhang_Z.Y.-1.55_mm_InAs-20140818.pdf (1.16 MB)
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