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Resonant tunnelling and intersubband absorption in AlN - GaN superlattices
Auteur(s)
Baumann, Esther
Giorgetta, Fabrizio R.
Wu, Hong
Schaff, William J.
Eastman, Lester F.
Kirste, Lutz
Date de parution
2005
In
Physica status solidi (c), Wiley, 2005/2/3/1014-1018
Résumé
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 <i>µ</i>m. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2-dimensional electron gas at the top of the superlattice gets depleted by a vertical transport of electrons.
Identifiants
Type de publication
journal article
