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  4. Photodetectors based on intersubband transitions using III-nitride superlattice structures
 
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Photodetectors based on intersubband transitions using III-nitride superlattice structures

Auteur(s)
Hofstetter, Daniel 
Institut de physique 
Baumann, Esther
Giorgetta, Fabrizio R.
Théron, Ricardo
Wu, Hong
Schaff, William J.
Dawlaty, Jahan
George, Paul A.
Eastman, Lester F.
Rana, Farhan
Kandaswamy, Prem K.
Leconte, Sylvain
Monroy, Eva
Date de parution
2009
In
Journal of Physics: Condensed Matter, Institute of Physics (IOP), 2009/21/17/174208 1-12
Résumé
We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz using a directly modulated semiconductor laser and up to 13.3 GHz using an ultra-short pulse solid state laser.
Identifiants
https://libra.unine.ch/handle/123456789/12208
_
10.1088/0953-8984/21/17/174208
Type de publication
journal article
Dossier(s) à télécharger
 main article: Hofstetter_Daniel_-_Photodetectors_based_on_intersubband_transitions_20101129.pdf (1.43 MB)
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