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The quasineutrality condition in amorphous semiconductors: Reformulation of the ‘lifetime/relaxation’ criterion
Auteur(s)
Shah, Arvind
Hubin, J.
Platz, R.
Goerlitzer, M.
Wyrsch, Nicolas
Date de parution
1996
In
Journal of Non-Crystalline Solids, Elsevier, 1996/198-200//548-551
Résumé
The concepts of lifetime and relaxation semiconductors introduced by van Roosbroeck and Casey are reconsidered for <i>amorphous</i> semiconductors and the effect of localized states on the lifetime/relaxation criterion specified: The quantity to be considered is τ<sub>ρ</sub>/<i>T</i><sub>d</sub>, where <i>T</i><sub>d</sub> is (as before) the dielectric relaxation time, but τ<sub>ρ</sub> is now the lifetime of the <i>total</i> charge <i>including</i> charge stored in localized states. τ<sub>ρ</sub> is equal to the free carrier lifetime times a correction factor that is much larger than unity for amorphous semiconductors. Bandtail states and dangling bonds act differently on the criterion. The correction factor is frequency-dependent and decreases at higher frequencies. Two illustrative experimental examples (low substrate temperature a-Si:H, a-SiC:H alloys) are given, showing borderline cases.
Identifiants
Type de publication
journal article
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