Options
Ultrafast carrier dynamics in undoped microcrystalline silicon
Auteur(s)
Kudrna, J.
Malý, P.
Trojánek, F.
Stepánek, J.
Lechner, T.
Pelant, I.
Meier, Johannes
Kroll, U.
Date de parution
2000
In
Materials Science and Engineering B, Elsevier, 2000/69-70//238-242
Résumé
We have studied ultrafast dynamics of photoexcited carriers in μc-Si:H by pump and probe laser spectroscopy. We have found that the dynamics of photoexcited carriers in μc-Si:H depend on the crystallinity of the material: in the samples with low crystalline fraction, the dynamics have a fast decay and resemble those in a-Si:H, while in the samples with high crystallinity the dynamics are slower and similar to those in c-Si. We have identified an intensity dependent bimolecular recombination in the samples with lower crystalline fraction (coefficient <i>B</i>=2×10<sup>−10</sup> cm<sup>3</sup> s<sup>−1</sup> for deposition with silane dilution ratio ≈5% at a fixed power of 6 W), and no bimolecular recombination in the samples with high crystallinity.
Identifiants
Type de publication
journal article
Dossier(s) à télécharger
