Options
X-ray absorption fine structure studies of buried Ge-Si interfaces
Auteur(s)
Aebi, Philipp
Tyliszczak, T.
Hitchcock, A. P.
Jackman, T. E.
Baribeau, J.-M.
Date de parution
1991
In
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, 1991/9/3/907-911
Résumé
We have used Ge A-edge x-ray absorption fine structure (EXAFS) and a gas ionization detector with sample rotation to study the local environment of nominally pure Qe layers buried in single crystal Si. The samples were grown by molecular-beam epitaxy on Si( 100). The dependence on thickness, number of Ge layers and growth temperature is explored. Considerable sensitivity to the quality of the epitaxial growth is observed. For instance the degree of mixing of the Si and Ge layers is a function of the growth temperature. A weak polarization dependence of the Ge K-edge. EXAFS is observed. The initial quantitative analysis provides estimates of intermixing in the thinnest layers which are compatible with results of complementary Raman measurements.
Identifiants
Autre version
http://adsabs.harvard.edu/abs/1991JVST....9..907A
Type de publication
journal article
Dossier(s) à télécharger
