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Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching
Auteur(s)
Kneissl, Michael
Bour, David P.
Donaldson, Rose M.
Walker, J.
Johnson, N. M.
Date de parution
1998
In
Journal of Crystal Growth, Elsevier, 1998/189-190//846-849
Résumé
Vertical mirrors have been fabricated with chemically assisted ion beam etching (CAIBE) on OMVPE grown InGaN/AlGaN laser diode structures. AFM measurements show that smooth vertical sidewalls are obtained which exhibit a root mean squared (rms) roughness of only 40–60 Å. The inclination angle of the etched mirrors is within ±2° of vertical, as SEM studies indicate. Photopumping measurements reveal that the reflectivity of the etched mirrors corresponds to 60–70% of the value for an ideal GaN/air interface. The reduced reflectivity may be due to surface roughness, a slight tilt in the facet angle, and the excitation of higher-order transverse waveguide modes in the laser structure.
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Type de publication
journal article
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