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Oxygen-segregation-controlled epitaxy of Y<sub>2</sub>O<sub>3</sub> films on Nb(110)
Auteur(s)
Hayoz, J.
Bovet, M.
Pillo, T.
Schlapbach, Louis
Aebi, Philipp
Date de parution
2000
In
Applied Physics A: Materials Science & Processing, Springer, 2000/71/6/615-618
Résumé
We demonstrate a very simple and reliable method of manufacturing clean, single-crystalline Y<sub>2</sub>O<sub>3</sub> films on Nb(110) substrates in situ. The method exploits the oxygen bulk contamination of Nb as a source of clean oxygen. For substrate temperatures above 800 K oxygen segregation to the Nb surface is so efficient, that yttrium becomes oxidized during deposition without any background oxygen pressure required in the ultrahigh vacuum system. The crystallinity and stoichiometry of these films can be tuned by the deposition temperature. For Y deposition at 1300 K the formation of well-ordered (111)-oriented Y<sub>2</sub>O<sub>3</sub> films is achieved.
Identifiants
Type de publication
journal article
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