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Role of i layer deposition parameters on the <i>V</i><sub>oc</sub> and <i>FF</i> of an a-Si:H solar cell deposited by PECVD at 27.13 MHz
Auteur(s)
Schönbächler, Isabelle
Benagli, S.
Bucher, C.
Shah, Arvind
Ballutaud, J.
Büchel, A.
Date Issued
2004
Journal
Thin Solid Films, Elsevier, 2004/451-452//250-254
Abstract
A study of the i-layer porosity as a function of the deposition parameters by PECVD technique, is presented here. It is demonstrated in particular, that for a fixed deposition rate of 2 Å/s, increasing the plasma power tends to increase the layer density, while increasing the pressure tends to increase the layer porosity. Regarding the cells, no correlation between the layer density and the initial cell performances is observed. On the contrary, the i-layer porosity seems to influence the cell degradation: High porosity of the i-layer leads to high degradation, which gives an easy tool to investigate the layer quality.
Publication type
journal article