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Latest developments in GaN-based quantum devices for infrared optoelectronics
Auteur(s)
Monroy, Eva
Guillot, Fabien
Leconte, Sylvain
Nevou, Laurent
Doyennette, Laeticia
Tchernycheva, Maria
Julien, François H.
Baumann, Esther
Giorgetta, Fabrizio R.
Date de parution
2008
In
Journal of Materials Science : Materials in Electronics, Springer, 2008/19/8-9/821-827
Résumé
In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical modulators operating at 1.55 μm. Finally, we discuss the progress towards intersubband light emitters, including the first experimental observation of intersubband photoluminescence in nitride nanostructures.
Identifiants
Type de publication
journal article
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