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Features of charge carrier transport determined from carrier extraction current in μc-Si:H
Auteur(s)
Juška, G.
Arlauskas, K.
Nekrašas, N.
Stuchlik, J.
Niquille, Xavier
Wyrsch, Nicolas
Date Issued
2002
Journal
Journal of Non-Crystalline Solids, Elsevier, 2002/299-302//375-379
Abstract
Temperature and electric field dependencies of mobility and concentration transients of electrons and holes using modified charge extraction by the linearly increasing voltage (CELIV) method in slightly doped n-type, p-type and undoped microcrystalline silicon (μc-Si:H) have been investigated. The results indicates that: the mobility of majority carriers causes temperature and electric field dependencies of conductivity; the photoconductivity transient is mainly determined by transient of charge carrier concentration; at room temperature the charge carrier transport is controlled by multiple trapping to energetic distributed localised states; at lower temperature the features characteristic of hopping transport have been obtained.
Publication type
journal article
