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Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures
Auteur(s)
Baumann, Esther
Giorgetta, Fabrizio R.
Théron, Ricardo
Wu, Hong
Schaff, William J.
Dawlaty, Jahan
George, Paul A.
Eastman, Lester F.
Rana, Farhan
Kandaswamy, Prem K.
Guillot, Fabien
Monroy, Eva
Date de parution
2010
In
Proceedings of the IEEE, Institute of Electrical and Electronics Engineers (IEEE), 2010/98/7/1234-1248
Résumé
We report on the physics, epitaxial growth, fabrication, and characterization of optoelectronic devices based on intersubband transitions in the AlN/GaN material system. While in 1999, only results of optical absorption experiments could be shown, photodetectors and modulators with operation frequencies beyond 10 GHz as well as optically pumped light emitters have been demonstrated recently. This is the reason for a comprehensive report on the most important properties of such devices. Beside some basic theoretical considerations, we will concentrate on the fabrication and characterization of modulators, switches, photodetectors, and light emitters. At the end of this paper, an outlook to future trends and developments in this emerging field will be given.
Identifiants
Type de publication
journal article
