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Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale
Auteur(s)
Wasmer, K.
Ballif, Christophe
Gassilloud, R.
Pouvreau, C.
Rabe, R.
Michler, J.
Breguet, J.-M.
Solletti, J.-M.
Karimi, A.
Schulz, D.
Date de parution
2005
In
Advanced Engineering Materials, Wiley, 2005/7/5/309-317
Mots-clés
Résumé
Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes were later directly deposited on CMOS readout chips. These integrated particle sensors have been characterized using light pulse illumination and beta particle irradiation from <sup>63</sup>Ni and <sup>90</sup>Sr sources. Direct detection of single low- and high-energy beta particles have been demonstrated. The application of this new integrated particle sensor concept for medical imaging is also discussed.
Identifiants
Type de publication
journal article
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