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Saturation behavior of the light-induced defect density inhydrogenated amorphous silicon [solar cells]
Auteur(s)
Park, H.R.
Liu, J.Z.
Roca i Cabarrocas, P.
Maruyama, A.
Isomura, M.
Wagner, S.
Abelson, J.R.
Finger, F.
Date de parution
1990
In
Conference Record of the 21th IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), 1990/2//1642-1647
Résumé
The light-induced generation of defects in a-Si:H(F) was saturated by a few hours of illumination with Kr-ion-laser light soaking (λ=647.1 nm) near room temperature. The time to reach saturation scales roughly with 1/G2, but the saturation value is essentially independent of the illumination intensity. Therefore, the saturation is not due to thermal annealing. The saturation values of the light-induced defect density in 37 a-Si:H(F) samples which had been grown in six different reactors over a range of conditions were measured. These a-Si:H(F) samples have annealed-state defect densities in the range of 1.1×10<sup>15</sup> to 1.6×10<sup>16</sup> cm<sup>-3</sup>, Urbach energies of 42-62 meV, and Tauc optical bandgaps of 1.61 to 1.83 eV. The saturation value rises from 5×10<sup>16</sup> to 2×10<sup>17</sup> cm<sup>-3</sup> with increasing optical gap and total hydrogen content, but it is not correlated with the Urbach energy or with the annealed-state defect density.
Identifiants
Type de publication
journal article
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