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More stable low gap a-Si:H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution
Auteur(s)
Ziegler, Y.
Daudrix, V.
Droz, C.
Platz, R.
Wyrsch, Nicolas
Shah, Arvind
Date de parution
2001
In
Solar Energy Materials and Solar Cells, Elsevier, 2001/66/1-4/413-419
Résumé
In the present work, several series with variation of deposition parameters such as hydrogen dilution ratio, VHF-power and plasma excitation frequency <i>f</i><sub>exc</sub> have been extensively analyzed. Compared with “conventional” more-stable layers obtained at 200–250°C and high H<sub>2</sub> dilution ratios of about 10, it was observed that electrical transport properties after light-induced degradation of layers deposited at “moderately high” temperatures (300–350°C) are equivalent but required lower H<sub>2</sub> dilution ratios (between 2 and 4). As a consequence, the deposition rate of more stable layers obtained at moderately high temperatures is increased by a factor of 2. Moreover, optical gaps of a-Si:H deposited at 300–350°C are significantly lower (by approx. 10 meV); furthermore, they decrease with <i>f</i><sub>exc</sub>.
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Type de publication
journal article
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