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  4. Passively <i>Q</i>-Switched Thulium Microchip Laser
 
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Passively <i>Q</i>-Switched Thulium Microchip Laser

Auteur(s)
Gaponenko, Maxim 
Institut de physique 
Kuleshov, Nikolay
Südmeyer, Thomas 
Institut de physique 
In
IEEE Photonics Technology Letters, IEEE, 2016/28/2/147-150
Mots-clés
  • Microchip lasers
  • <i>Q</i>-switched lasers
  • solid-state lasers
  • thulium
  • Microchip lasers

  • <i>Q</i>-switched las...

  • solid-state lasers

  • thulium

Résumé
We present the first passively <i>Q</i>-switched thulium microchip laser. The diode-pumped laser incorporates a Tm:KYW gain medium and an InGaAs semiconductor saturable absorber mirror. The laser emits pulses with a duration of 2.4 ns at a repetition rate of 1.2 MHz with an average output power of 130 mW at a wavelength of 1905 nm. It operates in a fundamental TEM<sub>00</sub> mode with M<sup>2</sup> < 1.1. The <i>Q</i>-switched pulse train is very stable with pulse-to-pulse intensity fluctuations <10% and a timing jitter of < ± 50 ns. Our microchip laser appears well suited as a seed in pulsed 2-<i>μ</i>m fiber amplifier systems for applications like material processing. In addition, we present new power scaling results for continuous-wave Tm-microchip lasers, achieving 1.6 W of output power in a fundamental TEM<sub>00</sub> mode. The slope efficiency relative to the absorbed pump power is as high as 74%, and the optical-to-optical efficiency is 41%. A maximum output power of 2.6 W is achieved in a TEM<sub>01∗</sub>-doughnutlike transverse mode. In all the cases, no active cooling is applied to the gain medium.
Identifiants
https://libra.unine.ch/handle/123456789/5599
_
10.1109/LPT.2015.2487562
Type de publication
journal article
Dossier(s) à télécharger
 main article: Gaponenko_M.-Passively_Q-switched-20161026.pdf (2.34 MB)
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