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MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes
Auteur(s)
Bour, David P.
Kneissl, Michael
Romano, Linda T.
McCluskey, Matthew D.
van de Walle, C. G.
Krusor, B. S.
Dunnrowicz, Clarence
Donaldson, Rose M.
Walker, J.
Johnson, N. M.
Date Issued
1999
Journal
Materials Science and Engineering B, Elsevier, 1999/59/1-3/33-38
Abstract
We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ~400 nm. The lowest threshold current density obtained was 6 kA cm<sup>−2</sup> with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved.
Publication type
journal article
