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Surface atomic structure of <i>c</i> (2×2)-Si on Cu(110)
Auteur(s)
Martín-Gago, J. A.
Fasel, R.
Hayoz, J.
Agostino, R. G.
Naumovic, D.
Aebi, Philipp
Schlapbach, Louis
Date de parution
1997
In
Physical Review B, American Physical Society (APS), 1997/55/19/12896-12898
Résumé
The technological importance of Schottky barriers has led to many experiments of metal-on-semiconductor systems. Here we present an example of the inverse case by depositing a semiconductor on a metal, studying the very early stages of the metal-semiconductor interface formation. We show that 0.5 monolayers of Si on Cu(110) form an ordered <i>c</i> (2×2) overlayer and resolve its geometrical structure. Using full-hemispherical x-ray photoelectron diffraction, we find that Si atoms form an almost coplanar layer, replacing one out of two Cu surface atoms.
Identifiants
Type de publication
journal article
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