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Dispersive hydrogen diffusion in an illuminated undoped a-Si:H film as a function of annealing temperature
Auteur(s)
Greim, O.
Weber, J.
Baer, Y.
Ziegler, Y.
Date de parution
1996
In
Solid State Communications, Elsevier, 1996/97/2/109-114
Résumé
The dependence of the dispersion parameter α and of the time dependent diffusion parameter D<sub>H</sub> (t<sub>L</sub>) (estimated over a fixed diffusion length L) on annealing temperature T<sub>a</sub> was investigated with elastic-recoil detection analysis (ERDA) in an undoped a-Si:H sample. We found that the α dark value increases with T<sub>a</sub> as already observed by other groups, and that the illuminated α value also increases. But we observe that D<sub>H</sub> (t<sub>L</sub>), measured under illumination, deviates from an Arrhenius law, while D<sub>H</sub> (t<sub>L</sub>) measured in the dark follows an Arrhenius behavior. <br><br> The hydrogen diffusion mechanisms under intense illumination are discussed in the framework of existing models.
Identifiants
Type de publication
journal article
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