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Plasma deposition of thin film silicon: kinetics monitored by optical emission spectroscopy
Auteur(s)
Feitknecht, Luc
Meier, Johannes
Torres, Pedro
Zürcher, Jerôme
Shah, Arvind
Date de parution
2002
In
Solar Energy Materials and Solar Cells, Elsevier, 2002/74/1.4/539-545
Résumé
The optical emission spectroscopy technique is used to characterise the temporal behaviour of a pure silane plasma in the first 90 s after ignition of a static closed-chamber very high frequency glow discharge. Special interest is drawn to the formation of microcrystalline silicon (μc-Si:H) in absence of any hydrogen feedstock gas dilution. The kinetics of the emission lines of SiH* and H<sub>α</sub> is reported. The deposited films are characterised by photothermal deflection spectroscopy, Fourier transform infra red (FT-IR) absorption and show typical microcrystalline fingerprints; for the first time, such material is used as absorber layer in n–i–p type solar cell devices.
Identifiants
Type de publication
journal article
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