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Dependence of the saturated light-induced defect density on macroscopic properties of hydrogenated amorphous silicon
Auteur(s)
Park, H. R.
Liu, J. Z.
Roca i Cabarrocas, P.
Maruyama, A.
Isomura, M.
Wagner, S.
Abelson, J. R.
Finger, F.
Date de parution
1990
In
Applied Physics Letters, American Institute of Physics (AIP), 1990/57/14/1440-1442
Résumé
We report a study of the saturated light-induced defect density <i>N</i><sub>s,sat</sub> in 37 hydrogenated (and in part fluorinated) amorphous silicon [<i>a</i>-Si:H(F)] films grown in six different reactors under widely different conditions. <i>N</i><sub>s,sat</sub> was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). <i>N</i><sub>s,sat</sub> is determined by the constant photocurrent method and lies between 5×10<sup>16</sup> and 2×10<sup>17</sup> cm<sup>−3</sup>. <i>N</i><sub>s,sat</sub> drops with decreasing optical gap <i>E</i><sub>opt</sub> and hydrogen content <i>c</i><sub>H</sub>, but is not correlated with the initial defect density <i>N</i><sub>s,ann</sub> or with the Urbach tail energy <i>E</i><sub>u</sub>. We discuss our results within the framework of existing models for light-induced defects.
Identifiants
Type de publication
journal article
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