Options
Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistors
Auteur(s)
Wang, Z.
Reimann, K.
Woerner, M.
Elsaesser, T.
Hwang, Jeff
Schaff, William J.
Eastman, Lester F.
Date de parution
2006
In
Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2006/32/1-2/562-565
Résumé
Femtosecond two-color pump-probe experiments in the mid-infrared are performed on intersubband transitions in a GaN/Al<sub>0.8</sub>Ga<sub>0.2</sub>N heterostructure. In these experiments, we observe around zero time delay distinct phonon sidebands, which disappear because of spectral diffusion with a time constant of 80 fs. The signal itself decays with a time constant of 380 fs. The independent boson model agrees very well with all observed results.
Identifiants
Type de publication
journal article
Dossier(s) à télécharger
