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Structural properties and electronic transport in intrinsic microcrystalline silicon deposited by the VHF-GD technique
Auteur(s)
Goerlitzer, M.
Torres, Pedro
Beck, N.
Wyrsch, Nicolas
Keppner, Herbert
Pohl, J.
Shah, Arvind
Date de parution
1998
In
Journal of Non-Crystalline Solids, Elsevier, 1998/227-230//996-1000
Résumé
A series of microcrystalline samples was deposited by the very high frequency glow discharge (VHF-GD) technique, with various input powers while keeping all the other parameters of deposition constant. The goal was to correlate transport and structural properties and avoid as much as possible the problem of a variation of the Fermi level between the samples. The observed decrease of the photoconductivity and of the product mobility-lifetime of hole (as measured by time of flight, TOF) with the increase of the power was surprisingly not connected to the structural properties, which remain approximately unchanged, but with a surface contribution to the transport properties.
Identifiants
Type de publication
journal article
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