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X-ray photoelectron diffraction of (100)-oriented chemical vapor deposited diamond films on silicon (100)
Auteur(s)
Schaller, E.
Küttel, O. M.
Aebi, Philipp
Schlapbach, Louis
Date Issued
1995
Journal
Applied Physics Letters, American Institute of Physics (AIP), 1995/67/11/1533-1534
Abstract
(100)-oriented diamond films have been grown on silicon (100) in a microwave plasma assisted chemical vapor deposition (CVD) tubular system. X-ray photoelectron diffraction (XPD) has been used to study such oriented polycrystalline films. Comparing the diffractograms of a natural diamond (100) surface and of polycrystalline (100)-oriented CVD diamond films quite similar features are observed. XPD measurements after 8 min of bias treatment show that the tiny crystals are already preferentially oriented at deposition parameters required for (100)-oriented film growth. Our measurements indicate a strong need to control the growth parameters very carefully during the first minutes of growth to get an orientation.
Publication type
journal article
