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GaN/AlN electro-optical modulator prototype at telecommunication wavelengths
Auteur(s)
Baumann, Esther
Giorgetta, Fabrizio R.
Guillot, Fabien
Leconte, Sylvain
Bellet-Amalric, Edith
Monroy, Eva
Date de parution
2007
In
Physica status solidi (c), Wiley, 2007/4/5/1621-1624
Résumé
We report on a prototype electro-optical modulator at telecommunication wavelength based on intersubband (ISB) transitions in a short-period GaN/AlN superlattice (SL). The device has a vertical architecture resembling a nitride-based high-electron mobility transistor, whose barrier layer has been replaced by a 5 period SL. By applying an electrical field, we were able to influence the bandstructure and as a consequence to quench the ISB absorption peak originating from the SL.
Identifiants
Type de publication
journal article
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