Options
Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy
Auteur(s)
Baumann, Esther
Giorgetta, Fabrizio R.
Golka, Sebastian
Schrenk, W.
Strasser, Gottfried
Kirste, Lutz
Date de parution
2006
In
Applied Physics Letters, American Institute of Physics (AIP), 2006/89/041106/1-3
Résumé
We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltaic signal which overlaps well with the corresponding absorption curve at around 1.5 <i>µ</i>m (830 meV), a common wavelength in optical fiber telecommunication systems. This photovoltaic signal is strongest at temperatures around 75 K and persists up to room temperature. The frequency response of this sample was measured with a modulated 1.5 <i>µ</i>m laser diode. The amplitude of the response was highest for a frequency of 36 kHz.
Identifiants
Type de publication
journal article
Dossier(s) à télécharger
