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Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior?
Auteur(s)
Meier, J.
Flückiger, R.
Keppner, H.
Shah, Arvind
Date de parution
1994
In
Applied Physics Letters, American Institute of Physics (AIP), 1994/65/7/860-862
Résumé
Complete µc-Si:H <i>p-i-n</i> solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic µ<i>c</i>-Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm<sup>2</sup> due to an enhanced absorption in the near-infrared could be obtained. First light-soaking experiments indicate no degradation for the entirely µ<i>c</i>-Si:H cells. Voltage-dependent spectral response measurements suggest that the carrier transport in complete µ<i>c</i>-Si:H <i>p-i-n</i> cells may possibly be cosupported by diffusion (in addition to drift).
Identifiants
Type de publication
journal article
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