Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
Date de parution
MRS Internet Journal of Nitride Semiconductor Research, Materials Research Society (MRS), 1999/4S1/G2.2/1-6
We present a device fabrication technology and measurement results of both optically pumped and electrically injected InGaN/GaN-based distributed feedback (DFB) lasers operated at room temperature. For the optically pumped DFB laser, we demonstrate a complex coupling scheme for the first time, whereas the electrically injected device is based on normal index coupling. Threshold currents as low as 1.1 A were observed in 500 µm long and 10 µm wide devices. The 3<sup>rd</sup> order grating providing feedback was defined holographically and dry-etched into the upper waveguiding layer by chemically-assisted ion beam etching. Even when operating these lasers considerably above threshold, a spectrally narrow emission (3.5 Å) at wavelengths around 400 nm was seen.
Type de publication