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III-Nitride Nanostructures for Infrared Optoelectronics
Auteur(s)
Monroy, Eva
Editeur(s)
Guillot, Fabien
Leconte, Sylvain
Bellet-Amalric, Edith
Nevou, Laurent
Doyennette, Laeticia
Tchernycheva, Maria
Julien, François H.
Baumann, Esther
Giorgetta, Fabrizio R.
Dang, Le Si
Date de parution
2006
In
Acta Physica Polonica A (Proceedings of the XXXV International School of Semiconducting Compounds), International Center for Scientific Research (CIRS), 2006/110/3/295-301
Résumé
Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91 <i>μ</i>m wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39 <i>μ</i>m at room temperature.
Autre version
http://przyrbwn.icm.edu.pl/APP/ABSTR/110/a110-3-3.html
Type de publication
Resource Types::text::journal::journal article
