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Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
Auteur(s)
McCluskey, Matthew D.
Editeur(s)
Romano, Linda T.
Krusor, B. S.
Bour, David P.
Kneissl, Michael
Johnson, N. M.
Suski, T.
Jun, J.
Date de parution
1999
In
MRS Internet Journal of Nitride Semiconductor Research, Materials Research Society (MRS), 1999/4S1/G3.42/1-6
Résumé
Interdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the <i>p</i>-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.
Autre version
http://nsr.mij.mrs.org/4S1/G3.42
Type de publication
Resource Types::text::journal::journal article
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