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High rate growth of microcrystalline silicon by VHF-GD at high pressure
Auteur(s)
Graf, U.
Editeur(s)
Meier, Johannes
Kroll, U.
Bailat, J.
Droz, C.
Vallat-Sauvain, Evelyne
Shah, Arvind
Date de parution
2003
In
Thin Solid Films, Elsevier, 2003/427/1-2/37-40
Résumé
Microcrystalline silicon growth using very high frequency-glow discharge PECVD has been studied under conditions of high pressure and high VHF-power conditions. Hereby, the influence of the total gas flow and the silane concentration on the deposition rate has been investigated. Deposition rates of over 25 Å/s have been achieved at relatively low total gas flows of 100 sccm. These high-rate films show device-grade quality with respect to subband gap absorption and microcrystalline structure. Dark conductivity measurements reveal midgap character and transmission electron microscopy investigations confirm a highly crystalline microstructure from the bottom to the top of the μc-Si:H films. These high-rate μc-Si:H layers are very interesting candidates for solar cell and other devices.
Autre version
http://dx.doi.org/10.1016/S0040-6090(02)01178-1
Type de publication
Resource Types::text::journal::journal article
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