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Dependence of the light-induced degradation kinetics of photoconductivity and ambipolar diffusion length as a function of doping level in <i>a</i>-Si:H
Auteur(s)
Sauvain, E.
Editeur(s)
Pipoz, P.
Shah, Arvind
Hubin, J.
Date de parution
1994
In
Journal of Applied Physics, American Institute of Physics (AIP), 1994/75/3/1722-1726
Autre version
http://dx.doi.org/10.1063/1.356361
Type de publication
Resource Types::text::journal::journal article
Dossier(s) à télécharger
