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Semiconductor-metal transition of the single-domain K/Si(100)-(2×1) interface by Fermi-surface determination
Auteur(s)
Martín-Gago, J. A.
Editeur(s)
Asensio, M. C.
Aebi, Philipp
Fasel, R.
Naumovic, D.
Osterwalder, J.
Refolio, M. C.
López-Sancho, J. M.
Rubio, J.
Date de parution
1998
In
Physical Review B, American Physical Society (APS), 1998/57/15/9201-9207
Résumé
The semiconductor-metal electronic transition of the K/Si(100)-(2×1) interface is studied by exploring the Fermi surface with photoemission spectroscopy. Once metallized at a critical coverage the surface remains metallic up to saturation. The experimentally determined Fermi surface consists of hole pockets centered around the Γ̅ points of the surface Brillouin zone. These results are fairly well reproduced by calculations based on a 2D Mott-Hubbard model. The metallization process is related to the overlap of Si-confined electron clouds surrounding the K atoms rather than to changes in the surface atomic structure.
Autre version
http://dx.doi.org/10.1103/PhysRevB.57.9201
Type de publication
Resource Types::text::journal::journal article
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